On the Mathematical Modeling of Memristor, Memcapacitor, and by Ahmed G. Radwan, Mohammed E. Fouda

By Ahmed G. Radwan, Mohammed E. Fouda

This publication introduces the elemental basics, versions, emulators and analyses of mem-elements within the circuit concept with purposes. The booklet begins reviewing the literature on mem-elements, versions and their fresh purposes. It offers mathematical versions, numerical effects, circuit simulations, and experimental effects for double-loop hysteresis habit of mem-elements. The authors introduce a generalized memristor version within the fractional-order area lower than diversified enter and assorted designs for emulator-based mem-elements, with circuit and experimental effects. the fundamental idea of memristive-based relaxation-oscillators within the circuit concept is additionally lined. The reader will furthermore locate during this ebook info on memristor-based multi-level electronic circuits, memristor-based multi-level multiplier and memcapacitor-based oscillators and synaptic circuits.

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Extra resources for On the Mathematical Modeling of Memristor, Memcapacitor, and Meminductor

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4 where the memristance reaches its minimum value Ron at different times based on the initial value. 24 2 Memristor: Models, Types, and Applications (a) (b) Fig. 3 The memristance value in case of step input voltage vs (t) = Vo , η = +1 versus a time−Vo plane when Ri = 1000 , and b time − Ri plane when Vo = −1 V 12000 R =12000 m 10000 Memristance R Fig. 5 Hz and f = 1 Hz where the memristance reaches its maximum in the first case as the flux increases unlike the second case. Moreover, the effect of the angle θ is shown in Fig.

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Nature 453(7191), 80 (2008) 47. 0333 48. : Molecular-junction-nanowire-crossbar-based neural network. US Patent 7,359,888 (2008) 49. , Bratkovski. : Memristive device and methods of making and using the same. US Patent App. 13/120,905 (2008) 50. : Non-volatile programmable impedance nanoscale devices. 1 The Missing Element History The first concept and realization of memory resistor device was proposed by Widrow in 1960 [1]. It was named memistor and had three terminals. The resistance of this memistor was variable and could be controlled and sensed using the control (DC current) and sensing (AC current) terminals.

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On the Mathematical Modeling of Memristor, Memcapacitor, and by Ahmed G. Radwan, Mohammed E. Fouda
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